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Aluminum nitride is an excellent material for a wide variety of applications due to its extreme microhardness (
Its excellent electrical insulation and mechanical strength are its two most notable properties. The material is non-toxic and can be shaped into complex geometries by cutting, grinding and etching. It can be used in conjunction with other materials such as boron nitride, Shapal Hi-M Soft and beryllium oxide to provide a more robust solution for harsh environments.
The crystalline structure of aluminium nitride gives the material exceptional corrosion resistance and good thermo-chemical stability. The material is brittle, however, and its surface can be oxidized, forming a layer of aluminium oxide. This layer helps to protect the material in oxidizing environments, but impacts its thermal conductivity. The layer can be removed by sandblasting and is not impacted by most industrial processes, but it will need to be retreated for higher temperature applications.
Aluminium nitride is an excellent substitute for gallium nitride in group III-V semiconductor devices because of its direct bandgap and high electron mobility, according to Zhang. It can be produced as a nitrogen-polar crystal and offers exciting new performance possibilities for electronic devices that operate at deep UV frequencies, such as light-emitting diodes and lasers. The material has the potential to outperform other high-speed materials because of its superior combination of electrical insulating and thermal conductivity properties.